STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Produkta apraksts
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,15
Katrs (tiek piegadats Tubina) (bez PVN)
€ 1,392
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
5
€ 1,15
Katrs (tiek piegadats Tubina) (bez PVN)
€ 1,392
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 5 - 20 | € 1,15 | € 5,75 |
| 25 - 45 | € 0,911 | € 4,56 |
| 50 - 95 | € 0,806 | € 4,03 |
| 100 - 245 | € 0,697 | € 3,48 |
| 250+ | € 0,669 | € 3,34 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Produkta apraksts
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products