N-Channel MOSFET Transistor, 18 A, 3-Pin TO-220FP STMicroelectronics STF26N60DM6

RS noliktavas nr.: 192-5048Ražotājs: STMicroelectronicsRažotāja kods: STF26N60DM6
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

18 A

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Height

16.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 2,95

Katrs (Paka ir 2) (bez PVN)

€ 3,57

Katrs (Paka ir 2) (Ieskaitot PVN)

N-Channel MOSFET Transistor, 18 A, 3-Pin TO-220FP STMicroelectronics STF26N60DM6
Izvēlēties iepakojuma veidu

€ 2,95

Katrs (Paka ir 2) (bez PVN)

€ 3,57

Katrs (Paka ir 2) (Ieskaitot PVN)

N-Channel MOSFET Transistor, 18 A, 3-Pin TO-220FP STMicroelectronics STF26N60DM6
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
2 - 8€ 2,95€ 5,90
10 - 18€ 2,75€ 5,50
20 - 48€ 2,60€ 5,20
50 - 98€ 2,45€ 4,90
100+€ 2,35€ 4,70

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

18 A

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

195 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Height

16.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more