N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220FP STMicroelectronics STF20NF20

RS noliktavas nr.: 178-1487Ražotājs: STMicroelectronicsRažotāja kods: STF20NF20
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.4mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

16.4mm

Series

STripFET

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,65

Katrs (Tubina ir 50) (bez PVN)

€ 1,996

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220FP STMicroelectronics STF20NF20

€ 1,65

Katrs (Tubina ir 50) (bez PVN)

€ 1,996

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220FP STMicroelectronics STF20NF20
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 1,65€ 82,50
100 - 450€ 1,25€ 62,50
500 - 950€ 1,05€ 52,50
1000+€ 0,851€ 42,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.4mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

16.4mm

Series

STripFET

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more