N-Channel MOSFET Transistor, 13 A, 3-Pin TO-220FP STMicroelectronics STF18N60M6

RS noliktavas nr.: 192-4652Ražotājs: STMicroelectronicsRažotāja kods: STF18N60M6
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

13 A

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

4.6mm

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,00

Katrs (Tubina ir 50) (bez PVN)

€ 2,42

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET Transistor, 13 A, 3-Pin TO-220FP STMicroelectronics STF18N60M6

€ 2,00

Katrs (Tubina ir 50) (bez PVN)

€ 2,42

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET Transistor, 13 A, 3-Pin TO-220FP STMicroelectronics STF18N60M6
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 2,00€ 100,00
100 - 450€ 1,60€ 80,00
500 - 950€ 1,50€ 75,00
1000 - 2450€ 1,50€ 75,00
2500+€ 1,45€ 72,50

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

13 A

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

4.6mm

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

16.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more