STMicroelectronics MDmesh M5 N-Channel MOSFET, 11 A, 710 V, 3-Pin TO-220FP STF15N65M5

RS noliktavas nr.: 168-7628Ražotājs: STMicroelectronicsRažotāja kods: STF15N65M5
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

710 V

Series

MDmesh M5

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

340 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

16.4mm

Izcelsmes valsts

China

Produkta apraksts

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 45,20

€ 0,904 Katrs (Tubina ir 50) (bez PVN)

€ 54,69

€ 1,094 Katrs (Tubina ir 50) (Ieskaitot PVN)

STMicroelectronics MDmesh M5 N-Channel MOSFET, 11 A, 710 V, 3-Pin TO-220FP STF15N65M5

€ 45,20

€ 0,904 Katrs (Tubina ir 50) (bez PVN)

€ 54,69

€ 1,094 Katrs (Tubina ir 50) (Ieskaitot PVN)

STMicroelectronics MDmesh M5 N-Channel MOSFET, 11 A, 710 V, 3-Pin TO-220FP STF15N65M5
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

710 V

Series

MDmesh M5

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

340 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

16.4mm

Izcelsmes valsts

China

Produkta apraksts

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more