Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Series
MDmesh, SuperMESH
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 1 657,50
€ 0,663 Katrs (Rulli ir 2500) (bez PVN)
€ 2 005,58
€ 0,802 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 1 657,50
€ 0,663 Katrs (Rulli ir 2500) (bez PVN)
€ 2 005,58
€ 0,802 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
2500 - 2500 | € 0,663 | € 1 657,50 |
5000+ | € 0,602 | € 1 505,00 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Series
MDmesh, SuperMESH
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts