Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
55 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Typical Gate Charge @ Vgs
40 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Series
STripFET II
Height
2.4mm
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,95
Katrs (Paka ir 5) (bez PVN)
€ 2,36
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,95
Katrs (Paka ir 5) (bez PVN)
€ 2,36
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 1,95 | € 9,75 |
25 - 45 | € 1,55 | € 7,75 |
50+ | € 1,50 | € 7,50 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
55 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Typical Gate Charge @ Vgs
40 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Series
STripFET II
Height
2.4mm
Minimum Operating Temperature
-55 °C