Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 7.75
€ 1.55 Each (In a Pack of 5) (Exc. Vat)
€ 9.38
€ 1.876 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 7.75
€ 1.55 Each (In a Pack of 5) (Exc. Vat)
€ 9.38
€ 1.876 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 1.55 | € 7.75 |
| 25 - 45 | € 1.45 | € 7.25 |
| 50 - 120 | € 1.30 | € 6.50 |
| 125 - 245 | € 1.15 | € 5.75 |
| 250+ | € 1.10 | € 5.50 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


