Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
2.4mm
Series
STripFET
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,557
Katrs (Rulli ir 2500) (bez PVN)
€ 0,674
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,557
Katrs (Rulli ir 2500) (bez PVN)
€ 0,674
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
6.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
2.4mm
Series
STripFET
Minimum Operating Temperature
-55 °C