N-Channel MOSFET Transistor, 53 A, 3-Pin D2PAK STMicroelectronics STB45N30M5

RS noliktavas nr.: 192-4651Ražotājs: STMicroelectronicsRažotāja kods: STB45N30M5
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

53 A

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

9.35mm

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

95 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

4.37mm

Forward Diode Voltage

1.5V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 4,50

Katrs (Rulli ir 1000) (bez PVN)

€ 5,445

Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET Transistor, 53 A, 3-Pin D2PAK STMicroelectronics STB45N30M5

€ 4,50

Katrs (Rulli ir 1000) (bez PVN)

€ 5,445

Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET Transistor, 53 A, 3-Pin D2PAK STMicroelectronics STB45N30M5
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

53 A

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Width

9.35mm

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

95 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

4.37mm

Forward Diode Voltage

1.5V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more