Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
9.35mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
95 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.37mm
Forward Diode Voltage
1.5V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,50
Katrs (Rulli ir 1000) (bez PVN)
€ 5,445
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 4,50
Katrs (Rulli ir 1000) (bez PVN)
€ 5,445
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
9.35mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
95 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.37mm
Forward Diode Voltage
1.5V
Izcelsmes valsts
China