STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

RS Stock No.: 719-637Brand: STMicroelectronicsManufacturers Part No.: SGT350R70GTK
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Country of Origin

China

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Stock information temporarily unavailable.

€ 2,280.00

€ 0.912 Each (On a Reel of 2500) (Exc. Vat)

€ 2,758.80

€ 1.104 Each (On a Reel of 2500) (inc. VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

2500

Available in multiples of 2500
2500€ 2,280.00
5000€ 4,560.00
7500€ 6,840.00
10000€ 9,120.00
12500€ 11,400.00
15000€ 13,680.00
17500€ 15,960.00
20000€ 18,240.00
22500€ 20,520.00
25000€ 22,800.00
27500€ 25,080.00
30000€ 27,360.00
32500€ 29,640.00
35000€ 31,920.00
37500€ 34,200.00

€ 2,280.00

€ 0.912 Each (On a Reel of 2500) (Exc. Vat)

€ 2,758.80

€ 1.104 Each (On a Reel of 2500) (inc. VAT)

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500€ 2,280.00
5000€ 4,560.00
7500€ 6,840.00
10000€ 9,120.00
12500€ 11,400.00
15000€ 13,680.00
17500€ 15,960.00
20000€ 18,240.00
22500€ 20,520.00
25000€ 22,800.00
27500€ 25,080.00
30000€ 27,360.00
32500€ 29,640.00
35000€ 31,920.00
37500€ 34,200.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

P-Channel

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-252

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.2mm

Height

2.4mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more