STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

RS Stock No.: 213-3943Brand: STMicroelectronicsManufacturers Part No.: SCTWA90N65G2V-4
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

200°C

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

€ 1,056.00

€ 35.20 Each (In a Tube of 30) (Exc. Vat)

€ 1,277.76

€ 42.592 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

30

Available in multiples of 30
30€ 1,056.00
60€ 2,112.00
90€ 3,168.00
120€ 4,224.00
150€ 5,280.00
180€ 6,336.00
210€ 7,392.00
240€ 8,448.00
270€ 9,504.00
300€ 10,560.00
330€ 11,616.00
360€ 12,672.00
390€ 13,728.00
420€ 14,784.00
450€ 15,840.00

€ 1,056.00

€ 35.20 Each (In a Tube of 30) (Exc. Vat)

€ 1,277.76

€ 42.592 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247

Stock information temporarily unavailable.

30

Available in multiples of 30
30€ 1,056.00
60€ 2,112.00
90€ 3,168.00
120€ 4,224.00
150€ 5,280.00
180€ 6,336.00
210€ 7,392.00
240€ 8,448.00
270€ 9,504.00
300€ 10,560.00
330€ 11,616.00
360€ 12,672.00
390€ 13,728.00
420€ 14,784.00
450€ 15,840.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

650V

Package Type

Hip-247

Series

SCTWA90N65G2V-4

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

656W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

200°C

Width

21.1 mm

Height

5.1mm

Length

15.9mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more