SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Package Type
Hip247
Series
SCTW90
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
SiC
Number of Elements per Chip
1
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 35,80
Katrs (bez PVN)
€ 43,32
Katrs (Ieskaitot PVN)
1
€ 35,80
Katrs (bez PVN)
€ 43,32
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 1 - 4 | € 35,80 |
| 5 - 9 | € 33,60 |
| 10 - 24 | € 31,80 |
| 25 - 49 | € 30,10 |
| 50+ | € 28,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
119 A
Maximum Drain Source Voltage
650 V
Package Type
Hip247
Series
SCTW90
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products