STMicroelectronics SCT SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin HiP247-4 SCT020W120G3-4AG

RS noliktavas nr.: 215-068Ražotājs: STMicroelectronicsRažotāja kods: SCT020W120G3-4AG
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Series

SCT

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 464,00

€ 48,80 Katrs (Tubina ir 30) (bez PVN)

€ 1 771,44

€ 59,048 Katrs (Tubina ir 30) (Ieskaitot PVN)

STMicroelectronics SCT SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin HiP247-4 SCT020W120G3-4AG

€ 1 464,00

€ 48,80 Katrs (Tubina ir 30) (bez PVN)

€ 1 771,44

€ 59,048 Katrs (Tubina ir 30) (Ieskaitot PVN)

STMicroelectronics SCT SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin HiP247-4 SCT020W120G3-4AG
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Series

SCT

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more