STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG

RS noliktavas nr.: 215-219Ražotājs: STMicroelectronicsRažotāja kods: SCT012H90G3AG
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

900 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 50 000,00

€ 50,00 Katrs (Rulli ir 1000) (bez PVN)

€ 60 500,00

€ 60,50 Katrs (Rulli ir 1000) (Ieskaitot PVN)

STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG

€ 50 000,00

€ 50,00 Katrs (Rulli ir 1000) (bez PVN)

€ 60 500,00

€ 60,50 Katrs (Rulli ir 1000) (Ieskaitot PVN)

STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 7-Pin H2PAK-7 SCT012H90G3AG
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

900 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more