Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
18 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Width
2.6mm
Height
1.6mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
€ 31.00
€ 3.10 Each (Supplied on a Reel) (Exc. Vat)
€ 37.51
€ 3.751 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
€ 31.00
€ 3.10 Each (Supplied on a Reel) (Exc. Vat)
€ 37.51
€ 3.751 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 10 - 20 | € 3.10 | € 15.50 |
| 25 - 95 | € 2.90 | € 14.50 |
| 100 - 495 | € 2.35 | € 11.75 |
| 500+ | € 2.10 | € 10.50 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
18 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Width
2.6mm
Height
1.6mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.


