N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001

RS noliktavas nr.: 917-2738PRažotājs: STMicroelectronicsRažotāja kods: PD84001
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

18 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.6mm

Width

2.6mm

Height

1.6mm

Produkta apraksts

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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€ 29,50

€ 2,95 Katrs (tiek piegadats Rulli) (bez PVN)

€ 35,70

€ 3,57 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001
Izvēlēties iepakojuma veidu

€ 29,50

€ 2,95 Katrs (tiek piegadats Rulli) (bez PVN)

€ 35,70

€ 3,57 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001

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Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Rullis
10 - 20€ 2,95€ 14,75
25 - 95€ 2,75€ 13,75
100 - 495€ 2,20€ 11,00
500+€ 2,00€ 10,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

18 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.6mm

Width

2.6mm

Height

1.6mm

Produkta apraksts

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more