Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
18 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Width
2.6mm
Height
1.6mm
Produkta apraksts
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
€ 29,50
€ 2,95 Katrs (tiek piegadats Rulli) (bez PVN)
€ 35,70
€ 3,57 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 29,50
€ 2,95 Katrs (tiek piegadats Rulli) (bez PVN)
€ 35,70
€ 3,57 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
10
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Rullis |
---|---|---|
10 - 20 | € 2,95 | € 14,75 |
25 - 95 | € 2,75 | € 13,75 |
100 - 495 | € 2,20 | € 11,00 |
500+ | € 2,00 | € 10,00 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
18 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.6mm
Width
2.6mm
Height
1.6mm
Produkta apraksts
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.