Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
70 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,842
Katrs (Tubina ir 50) (bez PVN)
€ 1,019
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,842
Katrs (Tubina ir 50) (bez PVN)
€ 1,019
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 0,842 | € 42,10 |
100 - 450 | € 0,59 | € 29,50 |
500 - 950 | € 0,51 | € 25,50 |
1000 - 1950 | € 0,435 | € 21,75 |
2000+ | € 0,409 | € 20,45 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
70 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
2 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.