Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
850 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,10
Katrs (Tubina ir 75) (bez PVN)
€ 1,331
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
€ 1,10
Katrs (Tubina ir 75) (bez PVN)
€ 1,331
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
75 - 75 | € 1,10 | € 82,50 |
150 - 900 | € 0,777 | € 58,28 |
975+ | € 0,534 | € 40,05 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Collector Base Voltage
850 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.