STMicroelectronics BUL381D NPN Transistor, 5 A, 800 V, 3-Pin TO-220

RS noliktavas nr.: 145-8849Ražotājs: STMicroelectronicsRažotāja kods: BUL381D
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Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

5 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

70 W

Minimum DC Current Gain

8

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.4 x 4.6 x 15.75mm

Maximum Operating Temperature

+150 °C

Izcelsmes valsts

China

Produkta apraksts

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,40

Katrs (Tubina ir 75) (bez PVN)

€ 1,694

Katrs (Tubina ir 75) (Ieskaitot PVN)

STMicroelectronics BUL381D NPN Transistor, 5 A, 800 V, 3-Pin TO-220

€ 1,40

Katrs (Tubina ir 75) (bez PVN)

€ 1,694

Katrs (Tubina ir 75) (Ieskaitot PVN)

STMicroelectronics BUL381D NPN Transistor, 5 A, 800 V, 3-Pin TO-220
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
75 - 75€ 1,40€ 105,00
150 - 150€ 1,05€ 78,75
225 - 450€ 1,00€ 75,00
525 - 900€ 0,881€ 66,08
975+€ 0,73€ 54,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

5 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

70 W

Minimum DC Current Gain

8

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.4 x 4.6 x 15.75mm

Maximum Operating Temperature

+150 °C

Izcelsmes valsts

China

Produkta apraksts

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more