Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40, 63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
General Purpose NPN Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,65
Katrs (bez PVN)
€ 0,79
Katrs (Ieskaitot PVN)
1
€ 0,65
Katrs (bez PVN)
€ 0,79
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 49 | € 0,65 |
50 - 99 | € 0,61 |
100 - 249 | € 0,55 |
250 - 499 | € 0,51 |
500+ | € 0,47 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40, 63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
General Purpose NPN Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.