Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,763
Katrs (Tubina ir 50) (bez PVN)
€ 0,923
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,763
Katrs (Tubina ir 50) (bez PVN)
€ 0,923
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 0,763 | € 38,15 |
100 - 450 | € 0,533 | € 26,65 |
500 - 950 | € 0,463 | € 23,15 |
1000 - 1950 | € 0,394 | € 19,70 |
2000+ | € 0,369 | € 18,45 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Produkta apraksts
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.