Semikron SKM100GB125DN Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

RS noliktavas nr.: 468-2410Ražotājs: SemikronRažotāja kods: SKM100GB125DN
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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94.5 x 34.5 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Produkta apraksts

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Noliktavas stāvoklis patreiz nav pieejams

€ 231,00

Katrs (bez PVN)

€ 279,51

Katrs (Ieskaitot PVN)

Semikron SKM100GB125DN Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

€ 231,00

Katrs (bez PVN)

€ 279,51

Katrs (Ieskaitot PVN)

Semikron SKM100GB125DN Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS2, Panel Mount
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cena
1 - 1€ 231,00
2 - 4€ 219,00
5 - 9€ 209,00
10 - 19€ 198,00
20+€ 188,00

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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94.5 x 34.5 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Produkta apraksts

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.