Tehniskie dokumenti
Specifikācija
Brand
SemikronMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
6
Package Type
SEMITOP3
Configuration
Hex
Mounting Type
Through Hole
Channel Type
N
Pin Count
36
Transistor Configuration
Six Pack
Dimensions
55 x 31 x 12mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Italy
Produkta apraksts
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 74,00
Katrs (bez PVN)
€ 89,54
Katrs (Ieskaitot PVN)
1
€ 74,00
Katrs (bez PVN)
€ 89,54
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 1 | € 74,00 |
2 - 4 | € 67,00 |
5 - 9 | € 61,50 |
10+ | € 55,00 |
Tehniskie dokumenti
Specifikācija
Brand
SemikronMaximum Continuous Collector Current
45 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
6
Package Type
SEMITOP3
Configuration
Hex
Mounting Type
Through Hole
Channel Type
N
Pin Count
36
Transistor Configuration
Six Pack
Dimensions
55 x 31 x 12mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Italy
Produkta apraksts
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.