Tehniskie dokumenti
Specifikācija
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
125 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Length
4.06mm
Width
5.08mm
Transistor Material
Si
Series
TetraFET
Height
2.18mm
Izcelsmes valsts
United Kingdom
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 41,80
Katrs (bez PVN)
€ 50,58
Katrs (Ieskaitot PVN)
1
€ 41,80
Katrs (bez PVN)
€ 50,58
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 41,80 |
10 - 19 | € 40,50 |
20+ | € 39,30 |
Tehniskie dokumenti
Specifikācija
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
125 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
7V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Length
4.06mm
Width
5.08mm
Transistor Material
Si
Series
TetraFET
Height
2.18mm
Izcelsmes valsts
United Kingdom