Tehniskie dokumenti
Specifikācija
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
65 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
17.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Length
4.06mm
Width
5.08mm
Series
TetraFET
Height
2.18mm
Izcelsmes valsts
United Kingdom
Produkta apraksts
RF MOSFET Transistors, Semelab
MOSFET Transistors, Semelab
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 28,50
Katrs (bez PVN)
€ 34,48
Katrs (Ieskaitot PVN)
1
€ 28,50
Katrs (bez PVN)
€ 34,48
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 24 | € 28,50 |
25 - 49 | € 27,50 |
50 - 99 | € 26,50 |
100 - 249 | € 26,00 |
250+ | € 25,50 |
Tehniskie dokumenti
Specifikācija
Brand
SemelabChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
65 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
17.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+200 °C
Length
4.06mm
Width
5.08mm
Series
TetraFET
Height
2.18mm
Izcelsmes valsts
United Kingdom
Produkta apraksts