N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11

RS noliktavas nr.: 133-2860Ražotājs: ROHMRažotāja kods: SCT2H12NZGC11
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Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

1700 V

Series

SCT2H12NZ

Package Type

TO-3PFM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +22 V

Transistor Material

Si

Length

16mm

Typical Gate Charge @ Vgs

14 nC @ 18 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

21mm

Forward Diode Voltage

4.3V

Produkta apraksts

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 8,90

Katrs (Paka ir 2) (bez PVN)

€ 10,769

Katrs (Paka ir 2) (Ieskaitot PVN)

N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11
Izvēlēties iepakojuma veidu

€ 8,90

Katrs (Paka ir 2) (bez PVN)

€ 10,769

Katrs (Paka ir 2) (Ieskaitot PVN)

N-Channel MOSFET, 3.7 A, 1700 V, 3-Pin TO-3PFM ROHM SCT2H12NZGC11
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
2 - 8€ 8,90€ 17,80
10+€ 7,40€ 14,80

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

1700 V

Series

SCT2H12NZ

Package Type

TO-3PFM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +22 V

Transistor Material

Si

Length

16mm

Typical Gate Charge @ Vgs

14 nC @ 18 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

21mm

Forward Diode Voltage

4.3V

Produkta apraksts

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more