Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Produkta apraksts
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 8,90
Katrs (Paka ir 2) (bez PVN)
€ 10,769
Katrs (Paka ir 2) (Ieskaitot PVN)
2
€ 8,90
Katrs (Paka ir 2) (bez PVN)
€ 10,769
Katrs (Paka ir 2) (Ieskaitot PVN)
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 8,90 | € 17,80 |
10+ | € 7,40 | € 14,80 |
Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Produkta apraksts