ROHM RZM001P02 P-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-723 RZM001P02T2L

RS noliktavas nr.: 124-6845Ražotājs: ROHMRažotāja kods: RZM001P02T2L
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Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Series

RZM001P02

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-10 V, +10 V

Width

0.9mm

Number of Elements per Chip

1

Length

1.3mm

Maximum Operating Temperature

+150 °C

Height

0.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 4,50

€ 0,036 Katrs (Paka ir 125) (bez PVN)

€ 5,44

€ 0,044 Katrs (Paka ir 125) (Ieskaitot PVN)

ROHM RZM001P02 P-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-723 RZM001P02T2L

€ 4,50

€ 0,036 Katrs (Paka ir 125) (bez PVN)

€ 5,44

€ 0,044 Katrs (Paka ir 125) (Ieskaitot PVN)

ROHM RZM001P02 P-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-723 RZM001P02T2L
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Series

RZM001P02

Package Type

SOT-723

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-10 V, +10 V

Width

0.9mm

Number of Elements per Chip

1

Length

1.3mm

Maximum Operating Temperature

+150 °C

Height

0.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more