Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Series
RU1C002ZP
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.35mm
Number of Elements per Chip
1
Length
2.1mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 5,70
€ 0,057 Katrs (Paka ir 100) (bez PVN)
€ 6,90
€ 0,069 Katrs (Paka ir 100) (Ieskaitot PVN)
Standarts
100
€ 5,70
€ 0,057 Katrs (Paka ir 100) (bez PVN)
€ 6,90
€ 0,069 Katrs (Paka ir 100) (Ieskaitot PVN)
Standarts
100
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Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Series
RU1C002ZP
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.35mm
Number of Elements per Chip
1
Length
2.1mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts