P-Channel MOSFET, 100 mA, 20 V, 3-Pin SC-85 ROHM RU1C001ZPTL

RS noliktavas nr.: 177-6793Ražotājs: ROHMRažotāja kods: RU1C001ZPTL
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Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Series

RU1C001ZP

Package Type

SC-85

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

10 V

Width

1.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.1mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

Thailand

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,066

Katrs (Paka ir 200) (bez PVN)

€ 0,08

Katrs (Paka ir 200) (Ieskaitot PVN)

P-Channel MOSFET, 100 mA, 20 V, 3-Pin SC-85 ROHM RU1C001ZPTL

€ 0,066

Katrs (Paka ir 200) (bez PVN)

€ 0,08

Katrs (Paka ir 200) (Ieskaitot PVN)

P-Channel MOSFET, 100 mA, 20 V, 3-Pin SC-85 ROHM RU1C001ZPTL
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
200 - 200€ 0,066€ 13,20
400 - 400€ 0,059€ 11,80
600 - 800€ 0,054€ 10,80
1000 - 1800€ 0,049€ 9,80
2000+€ 0,045€ 9,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Series

RU1C001ZP

Package Type

SC-85

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

10 V

Width

1.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.1mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more