P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR

RS noliktavas nr.: 178-5898Ražotājs: ROHMRažotāja kods: QS6U24TR
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Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

30 V

Series

QS6U24

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

1.7 nC @ 5 V (N Channel)

Height

0.95mm

Izcelsmes valsts

Thailand

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,51

Katrs (Paka ir 25) (bez PVN)

€ 0,617

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR

€ 0,51

Katrs (Paka ir 25) (bez PVN)

€ 0,617

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 1 A, 30 V, 6-Pin TSMT ROHM QS6U24TR
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 25€ 0,51€ 12,75
50 - 75€ 0,467€ 11,68
100 - 225€ 0,455€ 11,38
250 - 975€ 0,442€ 11,05
1000+€ 0,432€ 10,80

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

30 V

Series

QS6U24

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

900 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

1.7 nC @ 5 V (N Channel)

Height

0.95mm

Izcelsmes valsts

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more