Dual P-Channel MOSFET, 5 A, 20 V, 8-Pin TSMT ROHM QH8JA1TCR

RS noliktavas nr.: 178-5842Ražotājs: ROHMRažotāja kods: QH8JA1TCR
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Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

20 V

Series

QH8JA1

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

77 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±10 V

Width

2.5mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

10.2 nC @ 4.5 V (N Channel)

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

Japan

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,744

Katrs (Paka ir 20) (bez PVN)

€ 0,90

Katrs (Paka ir 20) (Ieskaitot PVN)

Dual P-Channel MOSFET, 5 A, 20 V, 8-Pin TSMT ROHM QH8JA1TCR

€ 0,744

Katrs (Paka ir 20) (bez PVN)

€ 0,90

Katrs (Paka ir 20) (Ieskaitot PVN)

Dual P-Channel MOSFET, 5 A, 20 V, 8-Pin TSMT ROHM QH8JA1TCR
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
20 - 40€ 0,744€ 14,88
60 - 80€ 0,68€ 13,60
100 - 240€ 0,662€ 13,24
260 - 980€ 0,645€ 12,90
1000+€ 0,629€ 12,58

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

20 V

Series

QH8JA1

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

77 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±10 V

Width

2.5mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

10.2 nC @ 4.5 V (N Channel)

Height

0.8mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more