ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

RS noliktavas nr.: 144-2259Ražotājs: ROHMRažotāja kods: BSM180D12P3C007
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Specifikācija

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

880 W

Number of Elements per Chip

2

Width

45.6mm

Length

122mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

Izcelsmes valsts

Japan

Produkta apraksts

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 775,00

€ 775,00 Katrs (bez PVN)

€ 937,75

€ 937,75 Katrs (Ieskaitot PVN)

ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007

€ 775,00

€ 775,00 Katrs (bez PVN)

€ 937,75

€ 937,75 Katrs (Ieskaitot PVN)

ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

c

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

880 W

Number of Elements per Chip

2

Width

45.6mm

Length

122mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

17mm

Izcelsmes valsts

Japan

Produkta apraksts

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more