Tehniskie dokumenti
Specifikācija
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
11 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
500 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.3 x 0.9 x 0.45mm
Izcelsmes valsts
Japan
Produkta apraksts
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.
Bipolar Transistors, ROHM Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,148
Katrs (Paka ir 50) (bez PVN)
€ 0,179
Katrs (Paka ir 50) (Ieskaitot PVN)
50
€ 0,148
Katrs (Paka ir 50) (bez PVN)
€ 0,179
Katrs (Paka ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 200 | € 0,148 | € 7,40 |
250 - 450 | € 0,133 | € 6,65 |
500 - 2450 | € 0,129 | € 6,45 |
2500 - 4950 | € 0,125 | € 6,25 |
5000+ | € 0,122 | € 6,10 |
Tehniskie dokumenti
Specifikācija
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
11 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
500 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.3 x 0.9 x 0.45mm
Izcelsmes valsts
Japan
Produkta apraksts
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.