Tehniskie dokumenti
Specifikācija
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
82
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
200 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1.2 x 0.8 x 0.5mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.
Bipolar Transistors, ROHM Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,124
Katrs (Paka ir 50) (bez PVN)
€ 0,15
Katrs (Paka ir 50) (Ieskaitot PVN)
50
€ 0,124
Katrs (Paka ir 50) (bez PVN)
€ 0,15
Katrs (Paka ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 200 | € 0,124 | € 6,20 |
250 - 450 | € 0,108 | € 5,40 |
500 - 2450 | € 0,098 | € 4,90 |
2500+ | € 0,091 | € 4,55 |
Tehniskie dokumenti
Specifikācija
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
82
Transistor Configuration
Common Emitter
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
200 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1.2 x 0.8 x 0.5mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.