Tehniskie dokumenti
Specifikācija
Brand
Renesas ElectronicsMaximum Continuous Collector Current
150 (Pulse) A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Maximum Power Dissipation
1.6 W
Package Type
TSOJ
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Transistor Configuration
Single
Dimensions
3.1 x 2.5 x 1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+150 °C
Produkta apraksts
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,35
Katrs (Paka ir 4) (bez PVN)
€ 1,634
Katrs (Paka ir 4) (Ieskaitot PVN)
4
€ 1,35
Katrs (Paka ir 4) (bez PVN)
€ 1,634
Katrs (Paka ir 4) (Ieskaitot PVN)
4
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
4 - 36 | € 1,35 | € 5,40 |
40 - 76 | € 1,10 | € 4,40 |
80 - 196 | € 1,00 | € 4,00 |
200 - 396 | € 0,96 | € 3,84 |
400+ | € 0,938 | € 3,75 |
Tehniskie dokumenti
Specifikācija
Brand
Renesas ElectronicsMaximum Continuous Collector Current
150 (Pulse) A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Maximum Power Dissipation
1.6 W
Package Type
TSOJ
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Transistor Configuration
Single
Dimensions
3.1 x 2.5 x 1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
5100pF
Maximum Operating Temperature
+150 °C
Produkta apraksts
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.