Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
Tehniskie dokumenti
Specifikācija
Brand
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maximum Operating Temperature
+175 °C
Izcelsmes valsts
China
Produkta apraksts
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 6,30
Katrs (Paka ir 2) (bez PVN)
€ 7,623
Katrs (Paka ir 2) (Ieskaitot PVN)
2
€ 6,30
Katrs (Paka ir 2) (bez PVN)
€ 7,623
Katrs (Paka ir 2) (Ieskaitot PVN)
2
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 2 - 18 | € 6,30 | € 12,60 |
| 20 - 38 | € 5,30 | € 10,60 |
| 40 - 198 | € 4,90 | € 9,80 |
| 200 - 398 | € 4,50 | € 9,00 |
| 400+ | € 4,05 | € 8,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Renesas ElectronicsMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
375 W
Package Type
TO-247A
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.94 x 5.02 x 21.13mm
Gate Capacitance
3000pF
Maximum Operating Temperature
+175 °C
Izcelsmes valsts
China
Produkta apraksts
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products