Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole
Tehniskie dokumenti
Specifikācija
Brand
Renesas ElectronicsMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
40 W
Package Type
TO-220FL
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Gate Capacitance
900pF
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Japan
Produkta apraksts
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,10
Katrs (Paka ir 2) (bez PVN)
€ 4,961
Katrs (Paka ir 2) (Ieskaitot PVN)
2
€ 4,10
Katrs (Paka ir 2) (bez PVN)
€ 4,961
Katrs (Paka ir 2) (Ieskaitot PVN)
2
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 2 - 8 | € 4,10 | € 8,20 |
| 10 - 18 | € 3,90 | € 7,80 |
| 20 - 48 | € 3,80 | € 7,60 |
| 50 - 98 | € 3,65 | € 7,30 |
| 100+ | € 3,60 | € 7,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Renesas ElectronicsMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
40 W
Package Type
TO-220FL
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Gate Capacitance
900pF
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Japan
Produkta apraksts
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products