N-Channel MOSFET, 19 A, 30 V, 8-Pin HSSO8-F1-B Panasonic SK8403190L

RS noliktavas nr.: 787-7633Ražotājs: PanasonicRažotāja kods: SK8403190L
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

HSSO8-F1-B

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.05mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+85 °C

Length

3.05mm

Typical Gate Charge @ Vgs

6.3 nC @ 4.5 V

Height

0.95mm

Series

SK

Minimum Operating Temperature

-40 °C

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,316

Katrs (Paka ir 20) (bez PVN)

€ 0,382

Katrs (Paka ir 20) (Ieskaitot PVN)

N-Channel MOSFET, 19 A, 30 V, 8-Pin HSSO8-F1-B Panasonic SK8403190L

€ 0,316

Katrs (Paka ir 20) (bez PVN)

€ 0,382

Katrs (Paka ir 20) (Ieskaitot PVN)

N-Channel MOSFET, 19 A, 30 V, 8-Pin HSSO8-F1-B Panasonic SK8403190L
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
20 - 80€ 0,316€ 6,32
100 - 380€ 0,268€ 5,36
400 - 980€ 0,237€ 4,74
1000+€ 0,217€ 4,34

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

HSSO8-F1-B

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.05mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+85 °C

Length

3.05mm

Typical Gate Charge @ Vgs

6.3 nC @ 4.5 V

Height

0.95mm

Series

SK

Minimum Operating Temperature

-40 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more