N-Channel MOSFET, 4.5 A, 20 V, 3-Pin SMini3-G1-B Panasonic MTM232230LBF

RS noliktavas nr.: 749-8255Ražotājs: PanasonicRažotāja kods: MTM232230LBF
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

20 V

Package Type

Smini3-G1-B

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Width

1.25mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.9mm

Series

MTM

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel MOSFET, Panasonic

MOSFET Transistors, Panasonic

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,549

Katrs (Paka ir 10) (bez PVN)

€ 0,664

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 4.5 A, 20 V, 3-Pin SMini3-G1-B Panasonic MTM232230LBF
Izvēlēties iepakojuma veidu

€ 0,549

Katrs (Paka ir 10) (bez PVN)

€ 0,664

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 4.5 A, 20 V, 3-Pin SMini3-G1-B Panasonic MTM232230LBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 90€ 0,549€ 5,49
100 - 190€ 0,31€ 3,10
200+€ 0,27€ 2,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

20 V

Package Type

Smini3-G1-B

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Width

1.25mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.9mm

Series

MTM

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel MOSFET, Panasonic

MOSFET Transistors, Panasonic

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more