Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Series
MTM
Package Type
Smini3-G1-B
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.25mm
Transistor Material
Si
Length
2mm
Height
0.8mm
Produkta apraksts
P-Channel MOSFET, Panasonic
MOSFET Transistors, Panasonic
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,49
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,593
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
50
€ 0,49
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,593
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
50 - 50 | € 0,49 | € 24,50 |
100+ | € 0,318 | € 15,90 |
Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
20 V
Series
MTM
Package Type
Smini3-G1-B
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.25mm
Transistor Material
Si
Length
2mm
Height
0.8mm
Produkta apraksts