Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
N, P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SSMini6 F3 B
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
6 Ω, 17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.6mm
Height
0.5mm
Series
FG
Izcelsmes valsts
China
Produkta apraksts
N/P-Channel Dual MOSFET, Panasonic
MOSFET Transistors, Panasonic
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,096
Katrs (Rulli ir 8000) (bez PVN)
€ 0,116
Katrs (Rulli ir 8000) (Ieskaitot PVN)
8000
€ 0,096
Katrs (Rulli ir 8000) (bez PVN)
€ 0,116
Katrs (Rulli ir 8000) (Ieskaitot PVN)
8000
Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
N, P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SSMini6 F3 B
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
6 Ω, 17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.6mm
Height
0.5mm
Series
FG
Izcelsmes valsts
China
Produkta apraksts