Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 → 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SSMini3 F3 B
Pin Count
3
Dimensions
1.6 x 0.85 x 0.7mm
Height
0.7mm
Width
0.85mm
Maximum Operating Temperature
+150 °C
Length
1.6mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,053
Katrs (Rulli ir 3000) (bez PVN)
€ 0,064
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,053
Katrs (Rulli ir 3000) (bez PVN)
€ 0,064
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 → 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SSMini3 F3 B
Pin Count
3
Dimensions
1.6 x 0.85 x 0.7mm
Height
0.7mm
Width
0.85mm
Maximum Operating Temperature
+150 °C
Length
1.6mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.