Silicon PIN photodiode,SMT,BPW34S

RS noliktavas nr.: 193-4796Ražotājs: OSRAM Opto SemiconductorsRažotāja kods: BPW34S
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Specifikācija

Brand

OSRAM Opto Semiconductors

Spectrums Detected

Infrared, Visible Light

Wavelength of Peak Sensitivity

850nm

Package Type

DIP

Mounting Type

Surface Mount

Number of Pins

2

Diode Material

Si

Minimum Wavelength Detected

400nm

Maximum Wavelength Detected

1100nm

Length

4.5mm

Width

4mm

Height

1.2mm

Peak Photo Sensitivity

0.62A/W

Angle of Half Sensitivity

60 °

Polarity

Reverse

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P.O.A.

Silicon PIN photodiode,SMT,BPW34S

1

Pieejams komplektos pa 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Silicon PIN photodiode,SMT,BPW34S
Noliktavas stāvoklis patreiz nav pieejams

1

Pieejams komplektos pa 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

OSRAM Opto Semiconductors

Spectrums Detected

Infrared, Visible Light

Wavelength of Peak Sensitivity

850nm

Package Type

DIP

Mounting Type

Surface Mount

Number of Pins

2

Diode Material

Si

Minimum Wavelength Detected

400nm

Maximum Wavelength Detected

1100nm

Length

4.5mm

Width

4mm

Height

1.2mm

Peak Photo Sensitivity

0.62A/W

Angle of Half Sensitivity

60 °

Polarity

Reverse

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