Dual N/P-Channel MOSFET, 2.5 A, 3 A, 60 V, 8-Pin SOT-28FL, VEC8 onsemi VEC2616-TL-W
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
2.5 A, 3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-28FL, VEC8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
116 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
2.9mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
2.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
0.73mm
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,656
Katrs (Paka ir 10) (bez PVN)
€ 0,794
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,656
Katrs (Paka ir 10) (bez PVN)
€ 0,794
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 40 | € 0,656 | € 6,56 |
| 50 - 190 | € 0,641 | € 6,41 |
| 200 - 490 | € 0,623 | € 6,23 |
| 500+ | € 0,608 | € 6,08 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
2.5 A, 3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-28FL, VEC8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
116 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
2.9mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
2.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
0.73mm
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products