Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,914
Katrs (Tubina ir 50) (bez PVN)
€ 1,106
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,914
Katrs (Tubina ir 50) (bez PVN)
€ 1,106
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 0,914 | € 45,70 |
100 - 450 | € 0,676 | € 33,80 |
500 - 950 | € 0,622 | € 31,10 |
1000+ | € 0,605 | € 30,25 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.