N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLTAG

RS noliktavas nr.: 141-2086Ražotājs: onsemiRažotāja kods: NVTFS5C658NLTAG
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

60 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.15mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Height

0.75mm

Series

NVTFS5C658NL

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,769

Katrs (Rulli ir 1500) (bez PVN)

€ 0,93

Katrs (Rulli ir 1500) (Ieskaitot PVN)

N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLTAG

€ 0,769

Katrs (Rulli ir 1500) (bez PVN)

€ 0,93

Katrs (Rulli ir 1500) (Ieskaitot PVN)

N-Channel MOSFET, 109 A, 60 V, 8-Pin WDFN onsemi NVTFS5C658NLTAG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

109 A

Maximum Drain Source Voltage

60 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.15mm

Typical Gate Charge @ Vgs

27 nC @ 10 V

Height

0.75mm

Series

NVTFS5C658NL

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more