onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW8 NVMTS0D7N04CLTXG

RS noliktavas nr.: 185-8159Ražotājs: onsemiRažotāja kods: NVMTS0D7N04CLTXG
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

433 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

630 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

205 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

99 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Automotive Standard

AEC-Q101

Izcelsmes valsts

Philippines

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Noliktavas stāvoklis patreiz nav pieejams

€ 21 000,00

€ 7,00 Katrs (Rulli ir 3000) (bez PVN)

€ 25 410,00

€ 8,47 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW8 NVMTS0D7N04CLTXG

€ 21 000,00

€ 7,00 Katrs (Rulli ir 3000) (bez PVN)

€ 25 410,00

€ 8,47 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW8 NVMTS0D7N04CLTXG
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

433 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

630 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

205 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

99 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Automotive Standard

AEC-Q101

Izcelsmes valsts

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more