Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
433 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
630 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
205 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
99 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
Philippines
€ 21 000,00
€ 7,00 Katrs (Rulli ir 3000) (bez PVN)
€ 25 410,00
€ 8,47 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 21 000,00
€ 7,00 Katrs (Rulli ir 3000) (bez PVN)
€ 25 410,00
€ 8,47 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
433 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
630 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
205 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
8mm
Length
8.1mm
Typical Gate Charge @ Vgs
99 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.15mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
Philippines