Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
166 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Izcelsmes valsts
Malaysia
€ 12,00
€ 1,20 Katrs (Paka ir 10) (bez PVN)
€ 14,52
€ 1,452 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 12,00
€ 1,20 Katrs (Paka ir 10) (bez PVN)
€ 14,52
€ 1,452 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
166 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Izcelsmes valsts
Malaysia