onsemi NVMFS5C604NL N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN NVMFS5C604NLAFT1G

RS noliktavas nr.: 141-2084Ražotājs: onsemiRažotāja kods: NVMFS5C604NLAFT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

287 A

Maximum Drain Source Voltage

60 V

Series

NVMFS5C604NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.1mm

Length

5.1mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Automotive Standard

AEC-Q101

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 3 975,00

€ 2,65 Katrs (Rulli ir 1500) (bez PVN)

€ 4 809,75

€ 3,206 Katrs (Rulli ir 1500) (Ieskaitot PVN)

onsemi NVMFS5C604NL N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN NVMFS5C604NLAFT1G

€ 3 975,00

€ 2,65 Katrs (Rulli ir 1500) (bez PVN)

€ 4 809,75

€ 3,206 Katrs (Rulli ir 1500) (Ieskaitot PVN)

onsemi NVMFS5C604NL N-Channel MOSFET, 287 A, 60 V, 4 + Tab-Pin DFN NVMFS5C604NLAFT1G
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

287 A

Maximum Drain Source Voltage

60 V

Series

NVMFS5C604NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.1mm

Length

5.1mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Automotive Standard

AEC-Q101

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more