onsemi N-Channel MOSFET, 80 A, 40 V, 5-Pin DFN NVMFS5C456NT1G

RS noliktavas nr.: 178-4303Ražotājs: onsemiRažotāja kods: NVMFS5C456NT1G
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Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

6.1mm

Length

5.1mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Izcelsmes valsts

Malaysia

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Jūs varētu interesēt
onsemi N-Channel MOSFET, 80 A, 40 V, 5-Pin DFN NVMFS5C456NT1G
€ 1,202Katrs (Paka ir 10) (bez PVN)

€ 1 057,50

€ 0,705 Katrs (Rulli ir 1500) (bez PVN)

€ 1 279,58

€ 0,853 Katrs (Rulli ir 1500) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 80 A, 40 V, 5-Pin DFN NVMFS5C456NT1G

€ 1 057,50

€ 0,705 Katrs (Rulli ir 1500) (bez PVN)

€ 1 279,58

€ 0,853 Katrs (Rulli ir 1500) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 80 A, 40 V, 5-Pin DFN NVMFS5C456NT1G

Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
onsemi N-Channel MOSFET, 80 A, 40 V, 5-Pin DFN NVMFS5C456NT1G
€ 1,202Katrs (Paka ir 10) (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

6.1mm

Length

5.1mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Izcelsmes valsts

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
onsemi N-Channel MOSFET, 80 A, 40 V, 5-Pin DFN NVMFS5C456NT1G
€ 1,202Katrs (Paka ir 10) (bez PVN)